Advancing the state of the art in IC manufacturing will require new substrates, new materials and greater process integration. For example, creating thin films for the 32 nm technology node and beyond will involve large wafer sizes up to 450 mm, the integration of new materials such as silicon-on-insulator (SOI) and quartz, epi layers, numerous rapid thermal processing (RTP) steps, and through-silicon-via (TSV) constructions.
At the 32 nm node, new types of defects such as crystalline defects from dislocations, pin marks, staking faults and surface pits are generated, which greatly impacts yield. Without a cost-effective means of locating and identifying such faults, the performance of subsequent processing steps will suffer. Lithography performance, which relies on the desired image’s interaction with a substrate’s surface, and TSV technology, which will be used in most emerging high-volume consumer applications, will be affected.
Systematic inspection of the front-side, back-side and edge of substrates is becoming more critical – both to provide holistic, 360-degree wafer inspection as well as to increase the productivity and return on investment from today’s multi-billion-dollar fabs. Holistic inspection needs will only increase as the industry continues to drive toward greater cost efficiencies by increasing substrate sizes beyond 300 mm diameters to 450 mm.
Available for: Silicium, SOI, EpiSi, Quartz, GaN, GaS, SiC, Sapphire, SoS and other engineered susbtrates.
Altatech combines the following technologies to provide accurate and full substrate information.
Proprietary sensor design with:
Advanced macro defect detection (µm range) and high speed inspection on the fly for scratches, particles, haze, liftmarks and more.
The wafer is scanned while entering measurement chamber, signal is post treated while topography and reflectivity is processed.
A patented phase shift technology with dual side inspection:
Topography imaging also provides high sensitivity for pin marks detection and film thickness.
Defects captured can be reviewed on optical station and SEM.