NanoCVD

Cluster, single to multi-chamber.

The AltaCVD product line combines Altatech’s unique technologies for your mature CVD applications and advanced materials deposition.

AltaCVD 300 can also be configured according to specific applications.

Specifications

• 300mm chamber
• Direct liquid injection of precursors with advanced vaporization system
• Wide spectrum of deposited materials through a wide range of vaporization and deposition temperatures
• Thermal CVD or RF-enhanced deposition (PECVD and PEALD)
• Low frequency plasma available for material mechanical/electrical/optical properties tuning

Applications

Mature CVD:

• PECVD SiO₂, SiN
• Amorphous Si, Ge, SiGe
• PECVD SiC, SiCN, SiOC
• WCVD
• SACVD SiO₂

High performance CMOS:

• FEOL
  - High K deposition for gate dielectrics
  - Metal gate (TiN, TaC, dual gates)
• BEOL (advanced Cu interconnects)
  - Mn-O self-forming barriers
  - MOCVD Ru for seedless Cu plating
  - 3D integration (barrier/CVD Cu seed for TSVs)

Capacitor:

• MIM and DRAM capacitor high k (Ta205, Al₂O₃, perovskites)
• Top and bottom capacitor electrode metals (Pt, Ru, RuO₂, IrO₂)
• eDRAM

Non volatile memory:

• Flash scaling
  - Tunnel oxide replacement for flash (high k)
  - Interpoly dielectric replacement (Al₂O₃) for flash
  - High WF metal gate for flash control gate
• New memory concept
  - 3D ferroelectric RAMs (PZT or SBT-based)
  - 3D phase-change RAMs (GST-based)
  - 3D resistive RAMs (metal oxide-based)

MEMS and “More than Moore”:

• 3D integration: TSV metallization
• Sensors: piezoelectrics, noble metals
• Thin film batteries (electrolyte, electrodes)
• Transparent conductive oxides
• RF devices (integrated or stand-alone)
• Above IC passive components

Emerging applications:

• CNTs
• Graphene
• Nanowires